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Hint: Assume that the top of the valence band has zero energy level. For both questions T = 300 K, Botzmann constant is kg = 8.617 x 10-5 eV/K. 4. If the conductivity of an intrinsic semiconductor at T = 300 K is 2.9 () and the hole and m² m² electron mobilities are 0.3 Vxs and 0.5 respectively, find the intrinsic carrier density n. Charge of an electron is: e = 1.6 x 10-19 (Coulomb). Vxs

Hint: Assume that the top of the valence band has zero energy level. For both questions T = 300 K, Botzmann constant is kg = 8.617 x 10-5 eV/K. 4. If the conductivity of an intrinsic semiconductor at T = 300 K is 2.9 () and the hole and m² m² electron mobilities are 0.3 Vxs and 0.5 respectively, find the intrinsic carrier density n. Charge of an electron is: e = 1.6 x 10-19 (Coulomb). Vxs

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Hint: Assume that the top of the valence band has zero energy level. For both questions T = 300 K, Botzmann constant is kg = 8.617 x 10-5 eV/K. 4. If the conductivity of an intrinsic semiconductor at T = 300 K is 2.9 () and the hole and electron mobilities are 0.3 m² m² and 0.5 respectively, find the intrinsic carrier density n₁. Charge of an electron is: e = 1.6 x 10-19 (Coulomb). Vxs Vxs
Transcribed Image Text:Hint: Assume that the top of the valence band has zero energy level. For both questions T = 300 K, Botzmann constant is kg = 8.617 x 10-5 eV/K. 4. If the conductivity of an intrinsic semiconductor at T = 300 K is 2.9 () and the hole and electron mobilities are 0.3 m² m² and 0.5 respectively, find the intrinsic carrier density n₁. Charge of an electron is: e = 1.6 x 10-19 (Coulomb). Vxs Vxs
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