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A p-n heterojunction is formed though Semiconductor A intimately contacting with Semiconductor B. The energy band diagrams for two semiconductors are shown in Figure 2 on page 4. It is given that XA = 2.0 eV,xB = 1.5 eV,Efa = 2.9 eV, Efß = 2.0 eV, Eg4 = 1.3 eV, EgB = 2.8 eV %3D Determine the total built-in potential across the heterojunction, mark the built-in electric field direction and indicate where the field is the strongest. Determine the discontinuities (in eV) in the conduction band edge and valence band edge, respectively. The vacuum level Хв ХА Есв CB ECA- EFB EgB EFA EVA EVB Semiconductor A Semiconductor B

A p-n heterojunction is formed though Semiconductor A intimately contacting with Semiconductor B. The energy band diagrams for two semiconductors are shown in Figure 2 on page 4. It is given that XA = 2.0 eV,xB = 1.5 eV,Efa = 2.9 eV, Efß = 2.0 eV, Eg4 = 1.3 eV, EgB = 2.8 eV %3D Determine the total built-in potential across the heterojunction, mark the built-in electric field direction and indicate where the field is the strongest. Determine the discontinuities (in eV) in the conduction band edge and valence band edge, respectively. The vacuum level Хв ХА Есв CB ECA- EFB EgB EFA EVA EVB Semiconductor A Semiconductor B

Question
p-n heterojunction is formed though Semiconductor A intimately contacting with Semiconductor B. The energy band diagrams for two semiconductors are shown in Figure 2 on page 4. It is given that А 1.5 eV, Efa — 2.9 еV, EFв 2.0 eV,EgA 1.3 еV, Egв 3D2.8 eV %3D ХА 3 2.0 еV, Хв %3D Determine the total built-in potential across the heterojunction, mark the built-in electric field direction and indicate where the field is the strongest. Determine the discontinuities (in eV) in the conduction band edge and valence band edge, respectively. The vacuum level Хв ХА Есв ECA- EFB EFA EVA gB EvB Semiconductor A Semiconductor B
Transcribed Image Text:p-n heterojunction is formed though Semiconductor A intimately contacting with Semiconductor B. The energy band diagrams for two semiconductors are shown in Figure 2 on page 4. It is given that А 1.5 eV, Efa — 2.9 еV, EFв 2.0 eV,EgA 1.3 еV, Egв 3D2.8 eV %3D ХА 3 2.0 еV, Хв %3D Determine the total built-in potential across the heterojunction, mark the built-in electric field direction and indicate where the field is the strongest. Determine the discontinuities (in eV) in the conduction band edge and valence band edge, respectively. The vacuum level Хв ХА Есв ECA- EFB EFA EVA gB EvB Semiconductor A Semiconductor B
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