a. In an p+-n- junction diode (NA >> ND), nearly all depletion is in the n-type region, and the peak electric field at the junction is almost independent of NA. b. The forward current of a p-n junction diode is dominated by the diffusion and recombination of majority carriers. c. In a Schottky barrier diode, there are two types of capacitances, i.e., the depletion capacitance and diffusion capacitance
True or false? If false, correct the statement:
a. In an p+-n- junction diode (NA >> ND), nearly all depletion is in the n-type region, and the peak electric field at the junction is almost independent of NA.
b. The forward current of a p-n junction diode is dominated by the diffusion and recombination of majority carriers.
c. In a Schottky barrier diode, there are two types of capacitances, i.e., the depletion capacitance and diffusion capacitance.
d. In a Schottky contact, the energy barrier seen by electrons in the metal is always the Schottky barrier height, regardless of the applied bias across the metal and semiconductor.
e. Usually the reverse current of a p-n junction diode is more sensitive to temperature as compared to that of a Schottky barrier diode.
f. In a MOS structure with p-type semiconductor, if the semiconductor work function is much smaller than the metal work function, the MOS structure will produce an inversion layer after reaching the thermal equilibrium.
g. For a MOS structure under the increasing bias applied between the metal and semiconductor, after the bias exceeds the threshold voltage, the semiconductor potential will keep increasing with the applied bias.
h. In a MOSFET, when the drain-to-source voltage (VDS) exceeds the saturation voltage (VDSsat), the channel electrostatics is nearly independent of VDS to the first order.
i. Body effect will reduce the saturation current of the MOSFET but not change VDSsat.
j. Body effect will reduce the saturation current of the MOSFET but not change VDSsat.
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