2.For a silicon one sided abrupt p/n junction hasNA = 1x10¹⁹ cm³ and NB =No=3x10¹5 cm³. Critical field atbreakdown is 3 x 105 V/cm. Maximum depletion width (Wm) isdefined as the depletion width at avalanche breakdown.Ignore Vbi.(a) Calculate avalanche breakdown voltage and Wm.(b) Calculate the breakdown voltage called punch throughvoltage if device width (W) is reduced to 3.3 μm.(c) Find the stored minority carriers per unit area in the neutraln-region for a forward bias of 0.5V. Diffusion length of holes is1 μm.

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