A p-n junction made of Silicon has an intrinsic carrier concentration of1.1 × 10¹⁰ cm−³, a donor concentration of 1.5 × 10¹7 cm-³ and an acceptorconcentration of 0.6 × 10¹6 cm−³ at room temperature (300 K).(i)(ii)(iii)Calculate the built-in potential established in the p-n junction. Giveyour answer to 2 d.p.Determine the voltage drop across the depletion layer on the n-side?Hint: Calculate this by finding the change in Fermi level (relativeto the intrinsic level) on the n-side.What are the two mechanisms responsible for the breakdown of ap-n junction when reverse biased?

Given:p−n junction is made out of Siliconintrinsic carrier concentration, ni = 1.1×1010 cm−3donor…

Answered: A p-n junction made of Silicon has an…

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