1. A silicon p-n junction has the hole and electron resistivity are 0.001 Q.m, 0.004 2.m respectively in T=250 °K. The electric field is 3X10² V/m, the intrinsic carrier density is 6.2 X10" m, the electron and hole diffusion length are 1.8X10* m, 1.1×10“ m respectively, the contact voltage is 0.35 V, and 1= h =8 µs. Find Reverse saturation current density.
1. A silicon p-n junction has the hole and electron resistivity are 0.001 Q.m, 0.004 2.m respectively in T=250 °K. The electric field is 3X10² V/m, the intrinsic carrier density is 6.2 X10" m, the electron and hole diffusion length are 1.8X10* m, 1.1×10“ m respectively, the contact voltage is 0.35 V, and 1= h =8 µs. Find Reverse saturation current density.
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Transcribed Image Text:1. A silicon p-n junction has the hole and electron resistivity are 0.001 Q.m, 0.004 N.m
respectively in T=250 °K. The electric field is 3X10 V/m, the intrinsic carrier density is 6.2
X101° m*, the electron and hole diffusion length are 1.8X10* m, 1.1X10“ m respectively,
the contact voltage is 0.35 V, and 1= h =8 us. Find Reverse saturation current density.
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