An ideal silicon p-n junction has Np= 2x10' cm, NA= 10 cm 2x10* cm? (a) Calculate the theoretical saturation current at 300K. (b) Calculate the forward and reverse and tn = tp = 10° s, and a device area of currents at + 0.7 V.
An ideal silicon p-n junction has Np= 2x10' cm, NA= 10 cm 2x10* cm? (a) Calculate the theoretical saturation current at 300K. (b) Calculate the forward and reverse and tn = tp = 10° s, and a device area of currents at + 0.7 V.
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![An ideal silicon p-n junction has Np= 2x10" cm , NA= 1015 cm , and tn = tp = 10-° s, and a device area of
2x10 cm? (a) Calculate the theoretical saturation current at 300K. (b) Calculate the forward and reverse
currents at ±0.7 V.](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2F6b3925e9-3698-4de9-9f01-eff4f69c62e5%2Ff124b5b1-1cca-4e87-b7f0-c69d68bf565c%2Fh79ldy_processed.jpeg&w=3840&q=75)
Transcribed Image Text:An ideal silicon p-n junction has Np= 2x10" cm , NA= 1015 cm , and tn = tp = 10-° s, and a device area of
2x10 cm? (a) Calculate the theoretical saturation current at 300K. (b) Calculate the forward and reverse
currents at ±0.7 V.
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