A piece of Ge is doped with donor atoms at a concentration of three orders of magnitude greater that the intrinsic concentration. Calculate the concentration of the minority carriers in the sample. Calculate the change in current density that doping the sample brings about, if a field of 10 V/m is applied. (Intrinsic concentration of Ge = 2.5x1019/m3. Electron mobility = 0.39 m2 /V.s and hole mobility = 0.19 m2 /V.s)
A piece of Ge is doped with donor atoms at a concentration of three orders of magnitude greater that the intrinsic concentration. Calculate the concentration of the minority carriers in the sample. Calculate the change in current density that doping the sample brings about, if a field of 10 V/m is applied. (Intrinsic concentration of Ge = 2.5x1019/m3. Electron mobility = 0.39 m2 /V.s and hole mobility = 0.19 m2 /V.s)
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Transcribed Image Text:A piece of Ge is doped with donor atoms at a concentration of three
orders of magnitude greater that the intrinsic concentration.
Calculate the concentration of the minority carriers in the sample.
Calculate the change in current density that doping the sample
brings about, if a field of 10 V/m is applied. (Intrinsic concentration of
Ge = 2.5x1019/m3. Electron mobility = 0.39 m2 /V.s and hole
mobility = 0.19 m2 /V.s)
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