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Consider a silicon pn junction at T = 300 K with acceptor doping concentrations of 1016 cm-3 and
donor doping concentrations of 1015cm3.
Calculate the width of the space charge region in the pn junction when a reverse biased voltage
of 5 V is applied.
Note/n; = 1.5 x 1010 cm-3
Es = 1.035 x 10-12F/cm

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