Find the thermal-equilibrium electron and hole concentrations in silicon with doping concentrations of N = 7 × 1015 cm-3 and N. = 3 X 1015 cm-3 for (a) T = 250 K and (b) T = 400 K.
Find the thermal-equilibrium electron and hole concentrations in silicon with doping concentrations of N = 7 × 1015 cm-3 and N. = 3 X 1015 cm-3 for (a) T = 250 K and (b) T = 400 K.
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Nd is donor concentration and Na is acceptor concentration
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