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t pn junction

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A silicon abrupt pn junction in thermal equilibrium at T = 300K is doped under the following conditions: p-side: Erp Ev = 0.18cV - n-side: EcEFn = 0.21eV Draw the energy band diagram of the pn junction Determine the impurity doping concentrations in each region Determine the build in voltage Vbi Find the depletion width in each region xp and x under 0 applied bias V₁ = a OV
Transcribed Image Text:A silicon abrupt pn junction in thermal equilibrium at T = 300K is doped under the following conditions: p-side: Erp Ev = 0.18cV - n-side: EcEFn = 0.21eV Draw the energy band diagram of the pn junction Determine the impurity doping concentrations in each region Determine the build in voltage Vbi Find the depletion width in each region xp and x under 0 applied bias V₁ = a OV
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