Consider a p+ -n Si diode with NA = 1018 cm-3 and ND = 1016 cm-3. The hole diffusion coefficient in the n-side is 10 cm2/s and carrier lifetime τp=10-7s. The device area is 10-4 cm2. Calculate the reverse saturation current and the forward current at a forward bias of 0.7 V at 300 K.
Consider a p+ -n Si diode with NA = 1018 cm-3 and ND = 1016 cm-3. The hole diffusion coefficient in the n-side is 10 cm2/s and carrier lifetime τp=10-7s. The device area is 10-4 cm2. Calculate the reverse saturation current and the forward current at a forward bias of 0.7 V at 300 K.
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Consider a p+ -n Si diode with NA = 1018 cm-3 and ND = 1016 cm-3. The hole diffusion coefficient in the n-side is 10 cm2/s and carrier lifetime τp=10-7s. The device area is 10-4 cm2. Calculate the reverse saturation current and the forward current at a forward bias of 0.7 V at 300 K.
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