Consider a silicon pn junction at T = 300 K Assume the doping concentration in then region is102cm and the doping concentration in the pregion is 1ore and assume that a forward biasof 0.30 V is applied to the pn junction. Nate/ n = 5 ×10Calculate the minority carrier concentration at the edge of the space charge regions.

Answered: Image /qna-images/answer/d9b14619-5eaa-4131-9bd1-c34601264fb6.jpg

Consider a silicon pn junction at T = 300 K 10 cm and the doping concentration in the p region is 10em of 0.30 V is applied to the pn junction. Note/ n, = 15 x10 cm Assume the doping concentration in the n region is and assume that a forward bias Calculate the minority carrier concentration at the edge of the space charge regions.

Consider a silicon pn junction at T = 300 K 10 cm and the doping concentration in the p region is 10em of 0.30 V is applied to the pn junction. Note/ n, = 15 x10 cm Assume the doping concentration in the n region is and assume that a forward bias Calculate the minority carrier concentration at the edge of the space charge regions.

College Physics

11th Edition

ISBN:9781305952300

Author:Raymond A. Serway, Chris Vuille

Publisher:Raymond A. Serway, Chris Vuille

Chapter1: Units, Trigonometry. And Vectors

Section: Chapter Questions

Problem 1CQ: Estimate the order of magnitude of the length, in meters, of each of the following; (a) a mouse, (b)...

See similar textbooks

Similar questions

In a p-type silicon sample. With the hole, concentration is equal to 2x1016 cm3. If the intrinsic carrier concentration is 4x101 cm3. The electron concentration (cm) would be ...
i need the answer quickly
Please provide Handwritten answer
The conductivity of a semiconductor is 250 S/m at 20 °C and 1100 S/m at 100 °C. Prove that the band gap of this semiconductor is 0.263 eV.
A nondegenerate silicon sample at room temperature with a length of 2 cm is uniformly doped with boron (B) atoms. Electric field 5 V/cm produces a current density of 0.8 A/cm? through this sample. Sample cross-sectional area is 0.1 cm?. Hn= 4000cm2/V-s H,= 1000 cm?/V-s. Calculate the majority carrier concentration. Please write your answer as a cm-3 and don't use units in the answer.
Consider a silicon pn junction at T= 300 K with an acceptor doping concentration (1 x 1018 cm-3) and a donor doping concentration (1 × 1015 cm-3. Assume that the intrinsic concentration is (1.5 x 1010 cm-3), the built-in potential barrier in the junction is.. Note: Boltzmann Constant is 8.62 x 10 cV/K e = 1.6 x 10-19C
Assume that the conductivity of a pure semiconductor at an applied electric field of 450 mV/m is 2.75 X 1013/Ω-cm. Given that the drift velocity of electrons is 0.135 m/s and that of holes is 0.048 m/s, determine the density of the charge carriers per cubic meter in this material. Round-off up to 4 decimal places for the entire solution till the final answer.
In a time-of-flight experiment, electron transit time was ti and t2 under the bias voltage of Vi and V2, respectively. The thickness of the n-type silicon between the front and back electrode is w. Express the electron mobility in terms of these parameters. It is given that vax = -µcFx.
A p-n junction has a saturation current of 6.40 mA. (a) At a temperature of 300 K, what voltage is needed to produce a positive current of 40.0 mA? (b) For a voltage equal to the negative of the value calculated in part (a), what is the negative current?
A silicon abrupt pn junction in thermal equilibrium at T = 300K is doped under the following conditions: p-side: Erp Ev = 0.18cV - n-side: EcEFn = 0.21eV Draw the energy band diagram of the pn junction Determine the impurity doping concentrations in each region Determine the build in voltage Vbi Find the depletion width in each region xp and x under 0 applied bias V₁ = a OV