A conventional GaAs pn-junction based LED is operated at 300 K and driven by a voltage V, in series with a 80 2 resistance. The light output is required to be 1 mW. The injection efficiency is 100%, the extraction efficiency is 3%, and the radiative and non-radiative recombination lifetimes are 40 and 80 ns, respectively. Calculate the peak emission wavelength and the required voltage Vs. Assuming the GaAs pn- junction LED is working under strong forward bias and the band gap for GaAs is Eg = 1.424 eV.

Question
A conventional GaAs pn-junction based LED is operated at 300 K and driven by a
voltage V, in series with a 80 resistance. The light output is required to be 1 mW.
The injection efficiency is 100%, the extraction efficiency is 3%, and the radiative
and non-radiative recombination lifetimes are 40 and 80 ns, respectively. Calculate
the peak emission wavelength and the required voltage Vs. Assuming the GaAs pn-
junction LED is working under strong forward bias and the band gap for GAAS is
Eg= 1.424 eV.
Transcribed Image Text:A conventional GaAs pn-junction based LED is operated at 300 K and driven by a voltage V, in series with a 80 resistance. The light output is required to be 1 mW. The injection efficiency is 100%, the extraction efficiency is 3%, and the radiative and non-radiative recombination lifetimes are 40 and 80 ns, respectively. Calculate the peak emission wavelength and the required voltage Vs. Assuming the GaAs pn- junction LED is working under strong forward bias and the band gap for GAAS is Eg= 1.424 eV.
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