A conventional GaAs pn-junction based LED is operated at 300 K and driven by a voltage V, in series with a 80 2 resistance. The light output is required to be 1 mW. The injection efficiency is 100%, the extraction efficiency is 3%, and the radiative and non-radiative recombination lifetimes are 40 and 80 ns, respectively. Calculate the peak emission wavelength and the required voltage Vs. Assuming the GaAs pn- junction LED is working under strong forward bias and the band gap for GaAs is Eg = 1.424 eV.

A conventional GaAs pn-junction based LED is operated at 300 K and driven by a voltage V, in series with a 80 2 resistance. The light output is required to be 1 mW. The injection efficiency is 100%, the extraction efficiency is 3%, and the radiative and non-radiative recombination lifetimes are 40 and 80 ns, respectively. Calculate the peak emission wavelength and the required voltage Vs. Assuming the GaAs pn- junction LED is working under strong forward bias and the band gap for GaAs is Eg = 1.424 eV.