An SiO2 layer is formed on top of pure silicon. The Auger peak of silicon is at 91 eV. After oxidation, it is shifted to 78 eV. Therefore, pure and oxidized silicon are easily distinguishable. When the surface is oxidized, the silicon 91 eV peak intensity decreases because of attenuation by the silicon dioxide layer. After an SiO2 layer of thickness t is formed, the 91 eV Auger peak drops to 15% of its clean surface value. The angle of electron collection is 45o from the surface normal. If the mean free path is 0.5 nm for 91 eV electrons in silicon dioxide, what is the thickness t of the oxide coating
An SiO2 layer is formed on top of pure silicon. The Auger peak of silicon is at 91 eV. After oxidation, it is shifted to 78 eV. Therefore, pure and oxidized silicon are easily distinguishable. When the surface is oxidized, the silicon 91 eV peak intensity decreases because of attenuation by the silicon dioxide layer. After an SiO2 layer of thickness t is formed, the 91 eV Auger peak drops to 15% of its clean surface value. The angle of electron collection is 45o from the surface normal. If the mean free path is 0.5 nm for 91 eV electrons in silicon dioxide, what is the thickness t of the oxide coating
College Physics
11th Edition
ISBN:9781305952300
Author:Raymond A. Serway, Chris Vuille
Publisher:Raymond A. Serway, Chris Vuille
Chapter1: Units, Trigonometry. And Vectors
Section: Chapter Questions
Problem 1CQ: Estimate the order of magnitude of the length, in meters, of each of the following; (a) a mouse, (b)...
Related questions
Question
An SiO2 layer is formed on top of pure silicon. The Auger peak of silicon is at 91 eV. After
oxidation, it is shifted to 78 eV. Therefore, pure and oxidized silicon are easily distinguishable.
When the surface is oxidized, the silicon 91 eV peak intensity decreases because of attenuation
by the silicon dioxide layer. After an SiO2 layer of thickness t is formed, the 91 eV Auger peak
drops to 15% of its clean surface value. The angle of electron collection is 45o from the surface
normal. If the mean free path is 0.5 nm for 91 eV electrons in silicon dioxide, what is the
thickness t of the oxide coating
Expert Solution
This question has been solved!
Explore an expertly crafted, step-by-step solution for a thorough understanding of key concepts.
This is a popular solution!
Trending now
This is a popular solution!
Step by step
Solved in 2 steps
Knowledge Booster
Learn more about
Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, physics and related others by exploring similar questions and additional content below.Recommended textbooks for you
College Physics
Physics
ISBN:
9781305952300
Author:
Raymond A. Serway, Chris Vuille
Publisher:
Cengage Learning
University Physics (14th Edition)
Physics
ISBN:
9780133969290
Author:
Hugh D. Young, Roger A. Freedman
Publisher:
PEARSON
Introduction To Quantum Mechanics
Physics
ISBN:
9781107189638
Author:
Griffiths, David J., Schroeter, Darrell F.
Publisher:
Cambridge University Press
College Physics
Physics
ISBN:
9781305952300
Author:
Raymond A. Serway, Chris Vuille
Publisher:
Cengage Learning
University Physics (14th Edition)
Physics
ISBN:
9780133969290
Author:
Hugh D. Young, Roger A. Freedman
Publisher:
PEARSON
Introduction To Quantum Mechanics
Physics
ISBN:
9781107189638
Author:
Griffiths, David J., Schroeter, Darrell F.
Publisher:
Cambridge University Press
Physics for Scientists and Engineers
Physics
ISBN:
9781337553278
Author:
Raymond A. Serway, John W. Jewett
Publisher:
Cengage Learning
Lecture- Tutorials for Introductory Astronomy
Physics
ISBN:
9780321820464
Author:
Edward E. Prather, Tim P. Slater, Jeff P. Adams, Gina Brissenden
Publisher:
Addison-Wesley
College Physics: A Strategic Approach (4th Editio…
Physics
ISBN:
9780134609034
Author:
Randall D. Knight (Professor Emeritus), Brian Jones, Stuart Field
Publisher:
PEARSON