If the gate length of a nMOS transistor is 10nm, under a certain value of electric field and the saturation velocity of electrons in silicon is in the order of 2x105 m/s. For a rough estimation, the possible required time for "an electron" to travel across the Si channel will be in about seconds.
If the gate length of a nMOS transistor is 10nm, under a certain value of electric field and the saturation velocity of electrons in silicon is in the order of 2x105 m/s. For a rough estimation, the possible required time for "an electron" to travel across the Si channel will be in about seconds.
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Transcribed Image Text:If the gate length of a nMOS transistor is 10nm, under a
certain value of electric field
and the saturation velocity of electrons in silicon is in the
order of 2x105 m/s. For a
rough estimation, the possible required time for "an
electron" to travel across the Si
channel will be in about
seconds.
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