A planar optical waveguide of length = 5 cm is fabricated in an epitaxial layer of GaAs that has an n-type doping concentration of 1x10¹8/cm³. (a) What is ratio to the input power of the total power lost over the length of the waveguide that results from free-carrier absorption? (b) What is the answer to part (a) if the doping concentration is reduced to 1x10¹6/cm³?
A planar optical waveguide of length = 5 cm is fabricated in an epitaxial layer of GaAs that has an n-type doping concentration of 1x10¹8/cm³. (a) What is ratio to the input power of the total power lost over the length of the waveguide that results from free-carrier absorption? (b) What is the answer to part (a) if the doping concentration is reduced to 1x10¹6/cm³?
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