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A planar optical waveguide of length = 5 cm is fabricated in an epitaxial layer
of GaAs that has an n-type doping concentration of 1×10¹8/cm³.
(a) What is ratio to the input power of the total power lost over the length of
the waveguide that results from free-carrier absorption?
(b) What is the answer to part (a) if the doping concentration is reduced to
1x10¹6/cm³?

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