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Consider a silicon pn junction atT 300 Kwith acceptor doping concentrations of10 donor doping concentrations of 1ocm and Calculate the width of the space charge region in the pn junction when a reverse biased voltage of 5 V is applied. Note/n, = 15 x 10 cm = 1035 x 1oF/cm

Consider a silicon pn junction atT 300 Kwith acceptor doping concentrations of10 donor doping concentrations of 1ocm and Calculate the width of the space charge region in the pn junction when a reverse biased voltage of 5 V is applied. Note/n, = 15 x 10 cm = 1035 x 1oF/cm

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Consider a silicon pn junction atT 300 Kwith acceptor doping coacentrations of 10 cm and donor doping concentrations of 10m Calculate the width of the space charge region in the pn junetion whes a reverse biased voltage of 5 V is applied. Note/ n = 1S x 10 cm = 1.035 x 10 F/cm
Transcribed Image Text:Consider a silicon pn junction atT 300 Kwith acceptor doping coacentrations of 10 cm and donor doping concentrations of 10m Calculate the width of the space charge region in the pn junetion whes a reverse biased voltage of 5 V is applied. Note/ n = 1S x 10 cm = 1.035 x 10 F/cm
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