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Consider a silicon pn junction atT 300 Kwith acceptor doping coacentrations of 10 cm and
donor doping concentrations of 10m
Calculate the width of the space charge region in the pn junetion whes a reverse biased voltage
of 5 V is applied.
Note/ n = 1S x 10 cm
= 1.035 x 10 F/cm

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