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The hole concentration in a semiconductor at T=300K can be expressed as
p(x) =10" exp
20
cm , where x is measured in um. If the hole diffusion coefficient
is D, = 50 cm²/s.
(1) Determine the hole diffusion current as a function of x.
(2) Determine the location X, where the diffusion current is (%) of that at x= 0.

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