The concentration of H+ ions outside a membrane is 14 % of the concentrationinside the membrane. What must be the Nernst potential across the membrane tomaintain that concentration difference when the temperature is such that theRemember, the Boltzmann probability factor:KBTquantity=27 mV.-eΔΕZ = e¯¯kBT, Boltzmann's constant is kg = 1.38 x 10-23 JkBKand the= +1.6 x 10-19 C. Express your answer in mV =charge on a proton is e =milli-Volts = 10-3 Volts

Concentration of H+ ions outside the membrane, Cout=14100×Cin=0.14Cin where Cin-Concentration inside…

The concentration of H+ ions outside a membrane is 14 % of the concentration inside the membrane. What must be the Nernst potential across the membrane to maintain that concentration difference when the temperature is such that the =27 mV. Remember, the Boltzmann probability factor: KBT quantity e ΔΕ Z=eBT, Boltzmann's constant is kB = K' = 1.38 x 10-23_J and the charge on a proton ise = +1.6 × 10-19 C. Express your answer in mV = milli-Volts = 10-3 Volts

The concentration of H+ ions outside a membrane is 14 % of the concentration inside the membrane. What must be the Nernst potential across the membrane to maintain that concentration difference when the temperature is such that the =27 mV. Remember, the Boltzmann probability factor: KBT quantity e ΔΕ Z=eBT, Boltzmann's constant is kB = K' = 1.38 x 10-23_J and the charge on a proton ise = +1.6 × 10-19 C. Express your answer in mV = milli-Volts = 10-3 Volts

College Physics

11th Edition

ISBN:9781305952300

Author:Raymond A. Serway, Chris Vuille

Publisher:Raymond A. Serway, Chris Vuille

Chapter1: Units, Trigonometry. And Vectors

Section: Chapter Questions

Problem 1CQ: Estimate the order of magnitude of the length, in meters, of each of the following; (a) a mouse, (b)...

See similar textbooks

Similar questions

Pure silicon is used as a photon detector. An incoming photon can strike the surface and excite electrons from the valence band to the conduction band, where they can be counted. (a) Compute the number of electrons you would expect to count if a silicon detector is struck with a 1.04-MeV gamma ray produced in the decay of a 136Cs nucleus. (b) Explain why the counting of electrons should be more precise if the detector is cooled well below room temperature.
Consider the below single artificial neuron, 12 Suppose that the weights corresponding to the three inputs are wi = 2, wy =-4, w3 1 and the activation finction is defined below. %3D %3D 1 if v 20 6(v)= otherwise Calculate the output value y of the neuron for following set of inputs, Input P1 P2 I3 0.
The molar conductivity of Na1 ions in aqueous solution at 25°C has been determined to be =.01 × 10-2 (V cm)-1 mol-1L. Assume an electric field of 1.0 × 102 V cm-1 is applied to the solution. Calculate the mobility and the drift velocity of Na1 ions.
At what pressure, in atmospheres, would the number of molecules per unit volume in an ideal gas be equal to the number density of the conduction electrons in copper, with both gas and copper at temperature T =300 K?
Calculate the collision frequency for (a) a molecule in a sample of oxygen at 1.00 atm pressure and 25°C, and (b) a molecule of hydrogen in a region of interstellar space where the number density is 1.0 × 1010 molecules per cubic meter and the temperature is 30 K. Take the diameter of O2 to be 2.92 × 10-10 m and that of H2 to be 2.34 × 10-10 m.
use: n-101°cm, Eg 1.1eV, Ho 1000 cm2/V.s, Ho-250cm?/N.s, KT=26meV, q 1.6x10-19 C, Eg- 12 and Eo-8.85x10 14 F/cm. In Fig. 1 Find the electron diffusion current density at x 1um Ee B [0.45eV E Er 0. 0.5 ja Fig. 1 O a. 0.065A/cm2 O b. 0,82A/cm2 Oc 9.7x10 A/cm? O d. 0.487A/cm
Electronics Physics -HW2 QI. In a P-type germanium, ni = 2×10" electrons/m and the density of boron 4x1023 atoms/m'. The electrons and holes mobility are (0.4 and 0.2 m/ V. s) respectively. What is its conductivity before and after addition of boron atoms? Note: For after addition of boron atoms you need to compare the actual and approximate conductivity ملاحظة: بعد اضافة ذرات البورون يكون حساب التوصيليه بالاستخدام التقريب وبدون استخدام التقريب والمقارنة بين النتائج
10
Silicon atoms with a concentration of 7x 1010 cm3 are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T = 300 K: N. = 4.7 x 1017 cm-3 and N, = 7 x 1018cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The resulting semiconductor would be?
30
(Electroplating) A steel part with surface area A = 130 cm² is to be tin-plated. What average plating thickness will result if 15 amps are applied for 10 min in an acid sulfate electrolyte bath? The cathode efficiency for tin is E = 90% and the plating constant C = 4.21 x 10-2 mm³/amp-s. V = CIt V = ECIt d = V A Typical cathode efficiencies in electroplating and values of plating constant C. Compiled from [18]. Plate Metal Electrolyte Cadmium (2) Cyanide Chromium (3) Chromium-acid-sulfate Copper (1) Gold (1) Nickel (2) Silver (1) Tin (4) Zinc (2) Cyanide Cyanide Acid sulfate Cyanide Acid sulfate Chloride Plating Constant ca Cathode Efficiency % mm³/amp-s (in³/amp-min) 6.73 × 10-² (2.47 × 10-4) X 2.50 × 10-2 (0.92 × 10-4) 7.35 x 10-2 10.6 x 10-² 3.42 x 10-2 (2.69 × 10-4) (3.87 × 10-4) (1.25 × 10-4) 10.7 x 10-2 (3.90 × 10-4) 4.21 x 10-2 (1.54 × 10-4) 4.75 × 10-2 (1.74 x 10-4) 90 15 98 80 95 100 90 95 ¹Most common valence given in parentheses (); this is the value assumed in determining…