(c) If the gate oxide were destroyed by a static electricity discharge, speculate on how the current readings might be different from those that were observed.Be detailed in your response.
(c) If the gate oxide were destroyed by a static electricity discharge, speculate on how the current readings might be different from those that were observed.Be detailed in your response.
(d)Using an electron mobility value of μn= 800 cm2/V-s and a gate oxide thickness of xox= 80 nm, compute the value of Kn= μnCox.From this value and some of the simulateddata points (where the drain current is saturated) make a rough estimate of the W/L ratio for the 2N7000 MOSFET. Does this W/L ratio seem reasonable?
c)
Electrostatic discharge (ESD) has always been an important issue in the semiconductor industry as the source of unexpected destruction of semiconductor devices. ESD is the transfer of electrostatic charge between bodies or surfaces at different electrostatic potential. ESD is a high-current event (1–15 A) with a short duration (1–100 ns). ESD damage to integrated circuits (ICs) can be caused by:
human handling of chips (human body model – HBM),
robotic handling in assemblies (machine model – MM) and
charging of IC packages during automated assemblies and testing followed by discharge to ground (charged device model – CDM).
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