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Q2-Consider two samples: an n-type sample of silicon which has a uniform doping densityND = 1016 cm-3 of arsenic, and a p-type silicon sample which has NA = 1015 cm-3 ofboron. Determine the following:(a) Consider the n-type material. Find the temperature at which half the impurity atoms are ionized. Assume that all mobile electrons originate from the dopant impurities.(b) For each material, find the temperature at which the intrinsic concentration ni exceeds the impurity density by a factor of 10.(c) Assume full ionization of impurities. Find the equilibrium minority-carrier concentrations in each material at 30O K.(d) Find the Fermi level referred to the valence band edge EV in each material at 300 K.Find also the Fermi level if both types of impurities are present in the same sample(compensation doping).

Q2-Consider two samples: an n-type sample of silicon which has a uniform doping densityND = 1016 cm-3 of arsenic, and a p-type silicon sample which has NA = 1015 cm-3 ofboron. Determine the following:(a) Consider the n-type material. Find the temperature at which half the impurity atoms are ionized. Assume that all mobile electrons originate from the dopant impurities.(b) For each material, find the temperature at which the intrinsic concentration ni exceeds the impurity density by a factor of 10.(c) Assume full ionization of impurities. Find the equilibrium minority-carrier concentrations in each material at 30O K.(d) Find the Fermi level referred to the valence band edge EV in each material at 300 K.Find also the Fermi level if both types of impurities are present in the same sample(compensation doping).

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Q2-Consider two samples: an n-type sample of silicon which has a uniform doping densityND = 1016 cm-3 of arsenic, and a p-type silicon sample which has NA = 1015 cm-3 ofboron. Determine the following:(a) Consider the n-type material. Find the temperature at which half the impurity atoms are ionized. Assume that all| mobile electrons originate from the dopant impurities.(b) For each material, find the temperature at which the intrinsic concentration ni exceeds the impurity density by a factor of 10.(c) Assume full ionization of impurities. Find the equilibrium minority-carrier concentrations in each material at 300 K.(d) Find the Fermi level referred to the valence band edge EV in each material at 300 K.Find also the Fermi level if both types of impurities are present in the same sample(compensation doping).
Transcribed Image Text:Q2-Consider two samples: an n-type sample of silicon which has a uniform doping densityND = 1016 cm-3 of arsenic, and a p-type silicon sample which has NA = 1015 cm-3 ofboron. Determine the following:(a) Consider the n-type material. Find the temperature at which half the impurity atoms are ionized. Assume that all| mobile electrons originate from the dopant impurities.(b) For each material, find the temperature at which the intrinsic concentration ni exceeds the impurity density by a factor of 10.(c) Assume full ionization of impurities. Find the equilibrium minority-carrier concentrations in each material at 300 K.(d) Find the Fermi level referred to the valence band edge EV in each material at 300 K.Find also the Fermi level if both types of impurities are present in the same sample(compensation doping).
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