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In the fabrication of a p-type semiconductor, elemental boron is diffused a small distance into a solid crystalline silicon wafer. The boron concentration within the solid silicon determines semiconducting properties of the material. A physical vapor deposition process keeps the concentration of elemental boron at the surface of the wafer equal to 5.0 x 1020 atoms boron/cm³ silicon. In the manufacture of a transistor, it is desired to produce a thin film of silicon doped to a boron concentration of at least 1.7 x 10¹⁹ atoms boron/cm³ silicon at a depth of 0.20 microns (um) from the surface of the silicon wafer. It is desired to achieve this target within a 30-min processing time. The density of solid silicon can be stated as 5.0 x 1022 atoms Si/ cm³ solid. (a) (b) At what temperature must the boron-doping process be operated? It is known that the temperature dependence of the diffusion coefficient of boron (A) in silicon (B) is given by DAB = D₁ exp(-2⁰) RT Where Do 0.019 cm²/s and Qo-2.74 x 105 J/mol for elemental boron in solid silicon. What is the flux of boron atoms at the silicon wafer surface at 10 min vs. 30 min?

In the fabrication of a p-type semiconductor, elemental boron is diffused a small distance into a solid crystalline silicon wafer. The boron concentration within the solid silicon determines semiconducting properties of the material. A physical vapor deposition process keeps the concentration of elemental boron at the surface of the wafer equal to 5.0 x 1020 atoms boron/cm³ silicon. In the manufacture of a transistor, it is desired to produce a thin film of silicon doped to a boron concentration of at least 1.7 x 10¹⁹ atoms boron/cm³ silicon at a depth of 0.20 microns (um) from the surface of the silicon wafer. It is desired to achieve this target within a 30-min processing time. The density of solid silicon can be stated as 5.0 x 1022 atoms Si/ cm³ solid. (a) (b) At what temperature must the boron-doping process be operated? It is known that the temperature dependence of the diffusion coefficient of boron (A) in silicon (B) is given by DAB = D₁ exp(-2⁰) RT Where Do 0.019 cm²/s and Qo-2.74 x 105 J/mol for elemental boron in solid silicon. What is the flux of boron atoms at the silicon wafer surface at 10 min vs. 30 min?

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In the fabrication of a p-type semiconductor, elemental boron is diffused a small distance into a solid crystalline silicon wafer. The boron concentration within the solid silicon determines semiconducting properties of the material. A physical vapor deposition process keeps the concentration of elemental boron at the surface of the wafer equal to 5.0 x 1020 atoms boron/cm3 silicon. In the manufacture of a transistor, it is desired to produce a thin film of silicon doped to a boron concentration of at least 1.7 x 1019 atoms boron/cm3 silicon at a depth of 0.20 microns (µm) from the surface of the silicon wafer. It is desired to achieve this target within a 30-min processing time. The density of solid silicon can be stated as 5.0 x 1022 atoms Si/ cm3 solid. (a) At what temperature must the boron-doping process be operated? It is known that the temperature dependence of the diffusion coefficient of boron (A) in silicon (B) is given by Where Do=0.019 cm2/s and Qo=2.74 x 105 J/mol for elemental boron in solid silicon. (b) What is the flux of boron atoms at the silicon wafer surface at 10 min vs. 30 min?
In the fabrication of a p-type semiconductor, elemental boron is diffused a small distance into a solid crystalline silicon wafer. The boron concentration within the solid silicon determines semiconducting properties of the material. A physical vapor deposition process keeps the concentration of elemental boron at the surface of the wafer equal to 5.0 x 1020 atoms boron/cm³ silicon. In the manufacture of a transistor, it is desired to produce a thin film of silicon doped to a boron concentration of at least 1.7 x 10¹⁹ atoms boron/cm³ silicon at a depth of 0.20 microns (µm) from the surface of the silicon wafer. It is desired to achieve this target within a 30-min processing time. The density of solid silicon can be stated as 5.0 x 1022 atoms Si/ cm³ solid. (a) (b) At what temperature must the boron-doping process be operated? known that the temperature dependence of the diffusion coefficient of boron (A) in silicon (B) is given by = D₁ exp(-2⁰) RT = AB Where Do 0.019 cm²/s and Qo-2.74 x 105 J/mol for elemental boron in solid silicon. What is the flux of boron atoms at the silicon wafer surface at 10 min vs. 30 min?
Transcribed Image Text:In the fabrication of a p-type semiconductor, elemental boron is diffused a small distance into a solid crystalline silicon wafer. The boron concentration within the solid silicon determines semiconducting properties of the material. A physical vapor deposition process keeps the concentration of elemental boron at the surface of the wafer equal to 5.0 x 1020 atoms boron/cm³ silicon. In the manufacture of a transistor, it is desired to produce a thin film of silicon doped to a boron concentration of at least 1.7 x 10¹⁹ atoms boron/cm³ silicon at a depth of 0.20 microns (µm) from the surface of the silicon wafer. It is desired to achieve this target within a 30-min processing time. The density of solid silicon can be stated as 5.0 x 1022 atoms Si/ cm³ solid. (a) (b) At what temperature must the boron-doping process be operated? known that the temperature dependence of the diffusion coefficient of boron (A) in silicon (B) is given by = D₁ exp(-2⁰) RT = AB Where Do 0.019 cm²/s and Qo-2.74 x 105 J/mol for elemental boron in solid silicon. What is the flux of boron atoms at the silicon wafer surface at 10 min vs. 30 min?
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