An ideal rectifying contact is formed by depositing gold on n-type silicon doped at 1015 cm-3. At T = 300 K, determine the width of the depletion region. W = 9.540 X 10-4 cm W = 2.244 X 10-4 cm W = 1.033 X 10-4 cm OW = 4.151 X 10-4 cm
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![An ideal rectifying contact is formed by
depositing gold on n-type silicon doped at
1015 cm-3. At T= 300 K, determine the
width of the depletion region.
W = 9.540 X 10-4 cm
W = 2.244 X 10-4 cm
W = 1.033 X 10-4 cm
W = 4.151 X 10-4 cm](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2F254ab4ad-32b3-46a6-a767-6cfb48fa4969%2F5dd4aa3f-ac0e-4b6d-9419-37fc3400db92%2F92ifmwr_processed.jpeg&w=3840&q=75)
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