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An ideal rectifying contact is formed by depositing gold on n-type silicon doped at \(10^{15} \, \text{cm}^{-3}\). At \(T = 300 \, \text{K}\), determine the width of the depletion region.

- ○ \(W = 9.540 \times 10^{-4} \, \text{cm}\)
- ○ \(W = 2.244 \times 10^{-4} \, \text{cm}\)
- ○ \(W = 1.033 \times 10^{-4} \, \text{cm}\)
- ○ \(W = 4.151 \times 10^{-4} \, \text{cm}\)

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