The structure of a thin film capacitor is illustrated in Figure Q.2(c). This capacitorconsists of two dielectric materials layered in between two thin conducting planeswhich have similar magnitude of surface charge density, p, C/m². Assuming thatthe total thickness of the dielectric materials is very small compared to the surfacearea of the conducting planes, determine(i)The electric field intensity in each region of the dielectric medium.(ii)(iii)The potential difference between z = 0 m and z = b + c.The capacitance per unit area.(iv) The thickness of the Silicon dioxide film b, if the Titanium dioxide film hasa thickness of c = 0.5 µm and the thin film capacitor needs to be designedto produce a capacitance of 400 µF/m². z = b + cz=0bZaTitanium Dioxide, TiO₂&₁ = 90Silicon Dioxide, SiO₂&r=3.9Figure Q.2(c)aThin Conductory

Given:surface charge density on conductor, ρs C/m2SiO2 layer (region 1)thickness, d1 = b (from 0…

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