Consider a palladium Schottky diode at T = 300 K formed on n-type silicon doped at Ng = 5 X 1018 cm-3. Determine the electric field at the metal junction for VR = 2 V. Emax=2.18 X 106 V/cm Emax = 1.74 X 106 V/cm Emax = 3.11 X 106 V/cm Emax = 6.00 X 106 V/cm O Emax
Consider a palladium Schottky diode at T = 300 K formed on n-type silicon doped at Ng = 5 X 1018 cm-3. Determine the electric field at the metal junction for VR = 2 V. Emax=2.18 X 106 V/cm Emax = 1.74 X 106 V/cm Emax = 3.11 X 106 V/cm Emax = 6.00 X 106 V/cm O Emax
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Transcribed Image Text:Consider a palladium Schottky diode at T
=
= 300 K formed on n-type silicon doped
at N₁ = 5 X 1018 cm-³. Determine the
Nd
electric field at the metal junction for VR
= 2 V.
Emax = 2.18 X 106 V/cm
O Emax = 1.74 X 106 V/cm
Emax = 3.11 X 106 V/cm
Emax = 6.00 X 106 V/cm
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