4. In an n-type silicon, the Fermi energy level varies linearly with the distance over a short range. At 1 = 0, EF - EF, = 0.4 eV and at z = 10 cm, EF - EF. = 0.15 eV. (a) Write the expression for the electron concentration over the distance. (b) If the electron diffusion coefficient is D, = 25 cm/s, %3D calculate the electron diffusion current density at (i) z = 0 and (ii) z = 5 x 10- cm.
4. In an n-type silicon, the Fermi energy level varies linearly with the distance over a short range. At 1 = 0, EF - EF, = 0.4 eV and at z = 10 cm, EF - EF. = 0.15 eV. (a) Write the expression for the electron concentration over the distance. (b) If the electron diffusion coefficient is D, = 25 cm/s, %3D calculate the electron diffusion current density at (i) z = 0 and (ii) z = 5 x 10- cm.
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Transcribed Image Text:4. In an n-type silicon, the Fermi energy level varies linearly with the distance over a short range. At
x = 0, Er - EF = 0.4 eV and at z = 10- cm, EF – EF, = 0.15 eV. (a) Write the expression for
the electron concentration over the distance. (b) If the electron diffusion coefficient is D, = 25 cm/s,
calculate the electron diffusion current density at (i) z = 0 and (ii) z = 5 x 10- cm.
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