1. In semiconductors, how is conductivity affected by impurities (doping) and temperature? 2. Phosphorous is added to high purity silicon to produce a 1023 ?3 charges carrier concentration at room temperature. What is this type of material, n or p? 3. Calculate the conductivity of this material at room temperature, assuming that the mobilities of electrons and of the gaps are the same as for the intrinsic material ?e = 0.14 and ?h = 0.048 ?/ V s.? = 2240(Ω − ?)-1. P why?
1. In semiconductors, how is conductivity affected by impurities (doping) and temperature? 2. Phosphorous is added to high purity silicon to produce a 1023 ?3 charges carrier concentration at room temperature. What is this type of material, n or p? 3. Calculate the conductivity of this material at room temperature, assuming that the mobilities of electrons and of the gaps are the same as for the intrinsic material ?e = 0.14 and ?h = 0.048 ?/ V s.? = 2240(Ω − ?)-1. P why?
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1. In semiconductors, how is conductivity
affected by impurities (doping) and temperature?
2. Phosphorous is added to high purity silicon to produce a
1023 ?3 charges carrier concentration at room temperature. What is this type of material, n or p?
3. Calculate the conductivity of this material at room temperature, assuming that the mobilities of electrons and
of the gaps are the same as for the intrinsic material
?e = 0.14 and ?h = 0.048 ?/ V s.? = 2240(Ω − ?)-1. P why?
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