Answered: Q2/ If the resistivity of pure silicon… | bartleby

Related questions

Question

Q2/ If the resistivity of pure silicon is 2300 (2. m) and assuming that the valance
electrons of silicon is 4.
Let T = 300 K.
(a) Calculate the electron density per cubic meter
(b) Calculate the electron mobility when the electron density is doubled.
Note: Avogadro's number is 8.61 x 10 mol-
Atomic mass of silicon is 28.08 g/mol, mass density is 2.33 g/cm3

Expert Solution

Trending now

This is a popular solution!

Step by step

Solved in 3 steps with 3 images

SEE SOLUTION Check out a sample Q&A here

Blurred answer

Similar questions

Four 1-50 V AA batteries in Series are used to power a transistor radio - If the battenes Can move a charge of 2200, how long will They last if the radio has a resistance of 2000. Lanswer should be in hour). C
Copper has a density of 8.96 x 10³ kg/m³ and a resistivity of 1.70 x 10-³ 2-m. a) On the basis of the classical free-electron gas model, assuming that each Cu atom contributes one electron to the electron gas, calculate the average time between collisions of the electrons. b) Calculate the mean free path from the mean free time and the electron's thermal velocity. c) How does the mean free path compare with the spacing between atoms in the lattice of Cu?
Q1: A conductive wire has a resistivity of (0.649x10-8(Q.m)') at room temperature are (5.8x10* ) conduction electron/m3.Calculate the mobility, resistivity and relaxation time of electrons.
Analogue
A copper wire has a square cross section 2.3 mm on a side. The wire is 4 m long and carries a current of 3.6 A. The density of the free electrons is n = 8.5 x 1029 m-3. The resistivity of Copper is PCu = 1.7 x 10-8 N · m Find the magnitude of: 1. The current density in the wire is: [ Select ] x106 A/m². 2. The electric field in the wire is: [ Select ] _V/m. 3. The time required for a free electron to travel the length of the wire is: [ Select ] hours.
Please don't provide handwritten solution ....
Q2/ If the resistivity of pure silicon is 2300 (0. m) and assuming that the valance electrons of silicon is 4. Let T = 300 K. (a) Calculate the electron density per cubic meter (b) Calculate the electron mobility when the electron density is doubled. Note: Avogadro's number is 8.61 x 10 mol Atomic mass of silicon is 28.08 g/mol, mass density is 2.33 g/cm
2000 50 Consider the following energy band diagram. The 1000 Si 20 500 Ha, D, semiconductor is Si maintained at 300K with E¡-Ef 10 200 5 = E/4 at x=L & -L, and Ef - E;= E/4 at x=0. Note 100 Hp. Dp 50 the choice of Ef as the energy reference and the 20 identification of carriers at various points on the 10000 200 diagram. 5000 GaAs 100 Hai Dn 2000 Un, Up can be estimated from the figure. 50 1000 20 500 H,.D, 10 200 100 1014 1015 1016 1017 1018 1019 1020 Impurity concentration (cm-) Figure 2.3 O John Wiley & Sons, Inc. All rights reserved. Mobility (cm²/V s) Mobility (cm²/V s) Diffusivity (cm²/s) Diffusivity (cm²/Is)
Problem 5: A nichrome rod of length LN 58 cm is connected in series (end to end) to a carbon rod of length Lc 8 cm. Both rods have cross-sectional areas of A 55 mm2. At T0 20° C the restístivity of nichrome is ρΝ-1.50 x 10-6 Ω-m and the resistivity of carbon is pc 3.50 x 10-5 Q-m. The temperature coefficient of nichrome is positive with value a-0.4 x 10-3 °C-1. The temperature coefficient of carbon is negative with a value ac--0.5 x 10-3 °c1. The nonlinear dependence of the resistivity on temperature T can be written as ρ ea(T-To) .odu @ theexpertta.com - tracking id: 2N74-2F-82-4A-BAAB-13167. In accordance with Expert TA's Terms of Service. copying this information to any solutions sharing website is strictly forbidden. Doing so may result in termination of your Expert TA Account. A Part (a) Write an expression for the total resistance of the nichrome-carbon combination as a function of temperature in terms of quantities given in the introduction. Simplify your answer as much as…
Q4: For a Si conductor of length 5um doped n-type at 1015cm-3. Calculate the current density for an applied voltage of 2.5v across its length u, = 1500 m-2 vs (Ans. 8.82 x 10-2A/cm?).
Question-5. A semiconductor has an electrical conductivity of 20 (N-m)', whereas the electron and hole mobilities are 0.04 and 0.03 m2/V-s, respectively. The density of the semiconductor is 4.62 g/cm³. The electrical charge of an electron (e) is 1.6 ×10-19 C. The atomic weight of the semiconductor is 59.72 g/mol. Avogadro constant (NA) is 6.023 × 1023 atoms/mol. (a) Compute the intrinsic carrier concentration for the semiconductor at room temperature (25 °C). (b) Compute the number of free electrons per atom for the intrinsic semiconductor at room temperature.
160% P 2:35 Asiacell I. H.W -2.pdf H.W -2 6. For the circuit board in Fig. 7.66: a. Find the total resistance Ry of the configuration. b. Find the current drawn from the supply if the applied voltage is 48 V. c. Find the reading of the applied voltmeter. 6.8 kf V 1.2 k? 3.3 kN 2 kn Rr - 2.4 k2 48 V FIG. 7.66 Problem 6.

SEE MORE QUESTIONS