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Calculate the intrinsic carrier concentration in silicon at T = 250 K and at T = 400 K
The values of N. and Ny for silicon at T = 300 K are 2.8 X 1019 cm-3 and 1.04 X 1019
cm3, respectively. Both N, and N, vary as T3/2. Assume the bandgap energy of silicon
is 1.12 eV and does not vary over this temperature range.

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K and (ii) T=400 K. (b) Repeat part (a) for GaAs. ales in silicon between E, and 3.27 (a) Determine the total number (#/cm') of energy states in silicon between E, and E.-3 KT at (1) T = 300 K and (ii) T = 400 K. (b) Repeat part (a) for GaAs. (a) Plot the density of states in the conduction band of silic
X. Determine the resistivity of a germanium crystal at 300 K that has the simultaneous presence of (i) donor impurity of 1 in 10' and (ii) acceptor impurity of 1 in 10%. Given data: Atomic concentration in Germanium is 4.4 x 1022 atoms/cm³, n₁ = 2.5 × 10¹3 /cm³, He = 3800 cm² /Vs and h= 180 cm² /V s.
The effective density of states of a piece of silicon is Nc = 2x 19 cm3 in the conduction band at room temperature. Assume the intrinsic concentration, ni, is 1010 cm3. Suppose 0.1% of the equivalent density of states in the conduction band are filled with electrons at room temperature. (a) What is the doping concentration in the silicon? (b) What is the electron concentration in the silicon? (c) What is the hole concentration in the silicon? (d) What is the value of the Fermi-Dirac function f(E) at the conduction band edge?
1.0 Biased PN Junctions Consider two PN diodes, A and B as depicted below. Suppose the junction area for each diode is 1.0 x10-8 cm² (1 square-micron) P-doped N-doped N = 1016 1/ cm3 Ng = 1017 1/cm³ X, *po Vo в P-doped Na = 1018 1/cm3 N-doped Ng = 1017 1/cm3 Х ро Xno V. a) At VD =0 Volts, which diode has the wider total depletion region width (value (in microns) and what is it? b) At Vp =0 Volts, in which diode the magnitude of the maximum electric field in the depletion region is the largest and what is its value (in V/cm)? c) Under a reverse bias Vp <0, which diode will breakdown first (i.e. at a smaller magnitude of the negative bias).
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= Consider a silicon pn junction diode at T 300K. The reverse saturation current is ls 10-14 A and the ideality factor n = 1. Determine the diode current for a diode voltage of VD = 0.685 V and use that to determine the DC and AC resistance of the diode. RDC = 307 Q2 = rac =7Ω RDC = 224 22 rac 8 Ω RDC = 115 Q2 = rac = 40 RDC = 36 Q rac = 10