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K and (ii) T=400 K. (b) Repeat part (a) for GaAs.
ales in silicon between E, and
3.27 (a) Determine the total number (#/cm') of energy states in silicon between E, and
E.-3 KT at (1) T = 300 K and (ii) T = 400 K. (b) Repeat part (a) for GaAs.
(a) Plot the density of states in the conduction band of silic
<E.+ 0.4 eV. (b) Repeat nat
3.28

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