chapter 4.PNG →ProblemsQl: A bar of intrinsic silicon having a cross section area of3x104 m² has an n=1.5x1016m3. If µ=0.14 m2/V.s and u,-0.05m2/V.s. Find the long of the bar if the current is 1.2mA and theapplied voltage is 9V.(Ans: 1.026mm)Q2: Calculate the thermal equilibrium electron and holeconcentration in silicon at T=300K for the case when the Fermienergy level is 0.22 eV below the conduction band energy. Eg=1.12 eV. The values of Ne and N, are 2.8x1025/m³ and1.04x1025/m', respectively.(Ans: n=5.73x102²/m², p-8.43x10%m³)Q3: Find the intrinsic carrier concentration in silicon at (a)T=200K, (b) T=400K. The values of Ne and N, are 2.8x1025/mand 1.04x1025/m', respectively.(Ans: (a) 7.68x1010/m², (b) 2.38×1018/m³)Q4: Determine the position of the intrinsic Fermi level withrespect to the center of the bandgap in GaAs at T=300K.mn=0.067 mo, m,=0.48 mo(Ans: -38.2meV)II

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Problems QI: A bar of intrinsic silicon having a cross section area of 3x104 m² has an n=1.5x1016m3. If H,=0.14 m²/V.s and u,-0.05 m2/V.s. Find the long of the bar if the current is 1.2mA and the applied voltage is 9V. (Ans: 1.026mm)