QI/Find Fermi probability of level above of Fermi level by 0.28ev and temperature in degree is 500
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A: dear student according to the guidelines I am allowed to attempt only problem 5. please repost Q6
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Q: 7.6 A silicon pn junction in thermal equilibrium at T = 300 K is doped such that EF- EFi = 0.365 eV…
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Q: Problem 2. Find the equilibrium electron and hole concentration and the location of the Fermi level…
A: Here, T = 27 C = 300 K Phosphorus atoms = ND = 5 x 1015 cm-3 Boron atoms = NA = 4 x 1015 cm-3 Here,…
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Q: Plot the Fermi function Vs. Energy at the temperature of 500 K, when EF = 2 eV
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- Question 2 (A) : What is Fermi Deric probability of level above of Fermi level by 0.25 ev if temperature is 289°Using the Fermi-Dirac distribution function, compute the probability of having electrons occupying states with energies 0.2 eV above Fermi level, at the temperature of 10K, 300K, and 1000KQ7.6 using fermi Dirac distribution with no approximations
- 5. (a) What is the physical significance of the Fermi-Dirac function? Explain how the Fermi level changes in the intrinsic semiconductor as a function of effective mass of electrons and holes for T > 0K. (CO-3) (b) Find the conductivity of intrinsic silicon at room temperature. It is given that ni at room temperature for silicon is 1.5 x 1016 /m³ and the mobilities of electrons and holes in silicon are 0.13 m²/V sec and 0.05 m²/V sec, respectively. (CO-3)1. (a) Compute the concentration of holes and electrons in an intrinsic sample of Si at room temperature. You may take me = 0.7m and mh = m. (b) Determine the position of the Fermi level under these conditions.At a certain temperature, the electron and hole mobilities in intrinsic germanium are given as 0.43 and 0.21 m2/V s, respectively. If the electron and hole concentrations are both 2.3 x 10'® m, find the conductivity at this temperature.
- Q :- Find the mobilities, and resistivities of silicon samples at 300 K, for each of the following impurity concentrations: (a) 5 x 1015 boron atoms/cm³; (b) 2 x 1016 boron atoms/cm³ and 1.5 x 1016 arsenic atoms/cm³.Estimate the fraction of electrons excite above the Fermi level at room temperature (T=300K) for Sodium and copper? Given the Fermi energy (EF) for sodium and copper is 3.1eV and 7eV respectively.Cu has a mass density of 8.95 g/cm3, atomic weight of 63.55 g/mol and an electron resistivity of 1.55 x 10° Qm at room temperature. Assuming that the effictive mass is equal to normal electron mass calculate: (a) The concentation of the conduction electrons. (b) The mean free lifetime. (c) The Fermi energy. (d) The Fermi velocity. (e) The mean free path at the Fermi level. NA (Avogadro number)= 6.023 ×10²3 mol1 K (Boltzmann constant)= 1.38 x 10-23 JK1 e (elementray charge)= 1.60217662 × 10 19 coulombs m (electron mass)3 9.109 × 10" kg ħ(Planck constant) = 1.0545 × 10-34 J. s 1J= 6.241 x 1018 eV
- Calculate the density of electrons and holes of silicon at a temperature of 300 (k) knowing that the energy gap E = 1.12ev is the Fermi level.A typical value for the Fermi energy is 1.00 eV. At 298 K, calculate the energy above the Fermi energy at which the probability has fallen to 0.25; express your answer in eV.Using the Fermi function, estimate the temperature at which there is a 1% probability that an electron in a solid will have an energy of 0.5 eV above the Fermi energy.