7.6 A silicon pn junction in thermal equilibrium at T = 300 K is doped such that EF- EFi = 0.365 eV in the n region and Er – Ep = 0.330 eV in the p region. CHAPTER 7 The pn Junction (a) Sketch the energy-band diagram for the pn junction. (b) Find the impurity doping concentration in each region. (c) Determine V-

7.6 A silicon pn junction in thermal equilibrium at T = 300 K is doped such that EF- EFi = 0.365 eV in the n region and Er – Ep = 0.330 eV in the p region. CHAPTER 7 The pn Junction (a) Sketch the energy-band diagram for the pn junction. (b) Find the impurity doping concentration in each region. (c) Determine V-

College Physics

11th Edition

ISBN:9781305952300

Author:Raymond A. Serway, Chris Vuille

Publisher:Raymond A. Serway, Chris Vuille

Chapter1: Units, Trigonometry. And Vectors

Section: Chapter Questions

Problem 1CQ: Estimate the order of magnitude of the length, in meters, of each of the following; (a) a mouse, (b)...

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Question

Q7.6

pn junction. (c) Repeat parts (a) and (b) for T = 400 K.
An abrupt silicon pn junction at zero bias has dopant concentrations of Na
and N= 5 X 1015 cm 3. T= 300 K. (a) Calculate the Fermi level on each side of the
junction with respect to the intrinsic Fermi level. (b) Sketch the equilibrium energy-
band diagram for the junction and determine Vi from the diagram and the results of
part (a). (c) Calculate Vi using Equation (7.10), and compare the results to part (b).
(d) Determine Xpz Xp, and the peak electric field for this junction.
7.5 Repeat problem 7.4 for the case when the doping concentrations are N. = Na = 2 ×
1016 cm 3.
7.4
= 10'7 cm-3
7.6 A silicon pn junction in thermal equilibrium at T = 300 K is doped such that
EF- EF = 0.365 eV in the n region and Er – Er = 0.330 eV in the p region.
70
CHAPTER 7
The pn Junction
(a) Sketch the energy-band diagram for the pn junction. (b) Find the impurity doping
concentration in each region. (c) Determine Voi-
7.7 Consider a uniformly doped GaAs pn junction with doping concentrations of
Na = 2 X 105 cm 3 and Na = 4 × 1016 cm, Plot the built-in potential barrier
Vbi versus temperature over the range 200 sT< 400 K.
(a) Consider a uniformly doped silicon pn junction at T = 300 K. At zero bias, 25 per-
cent of the total space charge region is in the n-region. The built-in potential barrier is
7.8

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