EX: at what temperature will be The Fermi distribution of electron with Ke = 8.6 x10 ev K at home: Determine FCE) for electrons of The energy gap of Ge is 0.66cv at T= 300 K E-Ef gap energy E=0.5E is equal to O answer T=1262.24 K . ا... at home
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- Q1. Consider an extrinsic Silicon doped with Indium atoms at a concentration of N= 4x10cm, The ionization %3D energy for Indium is given as 0.16eV. Calculate: XX-44 a) The carrier concentrations n,, Po and the Fermi level E - Ep at the temperature of T = xx + 60 °K . 40+ xX N, cm, for xx < 50 100 b) The temperature at which P, = 60+ xX N, cm, for xx2 50 100 D. (Ex: xx = 00 → P, = 0.4N=1.6x1o cm; xx= 99 → P, = 1.59N, = 6.36x10 cm) c) Using a computer program, plot Po (T) versus temperature over the range 0ST S 800 °K in linear and logarithmic scale.Q3/ An experiment was conducted to find the relationship between the specific heat of potassium metal and the temperature, and it was found that this relationship takes the following formula at low temperatures 2.08 +2.57 T2 What is the value of each of: (1) the fermi temperature of potassium? (b) Debye temperature of potassium? Note that specific heat is measured in units of mj / mol / K.Q1/ Consider the depletion load transistor based at Voo - 3 V. Vtn=-2 V, Vtno 0.7 V, (W/L)p-10, such that the maximum power dissipation is 320 μW, when VI-3 V. And Kn=60μA/V, Determine the output voltage.
- Q7: Determine the temperature at which the probability that is empty 1%, and it's state energy below the Fermi-level by 0.3eV . Note that EF = 6.25eV? (Ans. 757° K).If a metal has 2 x 10 m electrons, calculate radius of Fermi sphere (ke) and Fermi velocity. (given A = 1.054x1034 J.s, mass of electron 9.1x10 31 kg). %3DQ1: Calculate the drift current density in silicon sample. If T-300 K, Na-1021/m³, Na-1020/m³V, H-0.85m²/V.S, Mp=0.04m²/V.s, E=35 V/cm.. (Ans: 6.8×10 A/m²).
- If Gold is deposited on GaAs with the doping concentrations Na = 5x1015 cm3 to form an ideal rectifying junction at T-300 K. When the applied voltage is VR = 1 V. i. Determine the theoretical values oBO. ii. Determine the theoretical values of Vi. 111. Determine the theoretical values of x, and Emax.Copper has mass density of 8.95 g/cm^2 and n electrical resistivity of 1.55 ×10^-8 ohm -m at room temperature. Assuming the effective mass is "mo " ,calcualte a, the concentration of the conduction electron . b,mean free time . c ,the Fermi energy.: A uniform piece of n-type of silicon that is lum long senses a voltage of 1 v. Determine the velocity of the electrons. Use p1350 cm/V.ses
- Q1:-Show that r2 for a spherical Fermi distribution, p(r) = Po|1+exp ( be expanded in () according to the expression: , can r? =R|1 + +-| 7n2 + .. Q2:- As nuclear model, the nucleus may separated into core and skin. Assume the core is uniformly charged with constant density Po, and the skin charge is linearly fall off to zero at the surface over 90% of the radius Ro. Calculate the electron scattering form factor F(q)from this model.Question 1: For Silicon material at room temperature that has Phosphorus impurity concentration of 4x1018 cm-³. Use n; = 1×10'10 cm ³ for Silicon. Answer the following questions: %3D а. Calculate the total number of free electrons. b. Calculate the total number of the holes.. С. S Determine the location of the Fermi level with respect to intrinsic Fermi Level (Ef-E;). d. sl Explain how to make p-type semiconductor material.B- When 4Volt applied on 100 meters wire, electron drift with 10* m/sec velocity and current density = 0.48A/mm2 find : 1- Number of collisions in one second. 2- Resistivity of this wire. 3- Energy of Fermi level. 4- Maximum velocity of free electron. %3D