8. Determine the diffusion capacitance due to holes in a Ge diode when forward bias current is I-26mA.given the mean life time of hole is 20uS at T-300K
8. Determine the diffusion capacitance due to holes in a Ge diode when forward bias current is I-26mA.given the mean life time of hole is 20uS at T-300K
Related questions
Question
- Design a П-section or CLC filter for a full wave rectifier with the values of output dc voltage of 10 V and a load current of 150 mA and to have a ripple factor of 1 %.

Transcribed Image Text:8. Determine the diffusion capacitance due to holes in a Ge
diode when forward bias current is I-26mA.given the
mean life time of hole is 20uS at T-300K
9. Design a n-section or CLC filter for a full wave rectifier with the values of
output dc voltage of 10 V and a load current of 150 mA and to have a
ripple factor of 1 %.
10.
A silicon PN diode has reverse saturation current of 20 µA
at temperature 20°C. Calculate its reverse saturation current at 60°C.
AwM
Expert Solution

This question has been solved!
Explore an expertly crafted, step-by-step solution for a thorough understanding of key concepts.
This is a popular solution!
Trending now
This is a popular solution!
Step by step
Solved in 2 steps
