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8. Determine the diffusion capacitance due to holes in a Ge diode when forward bias current is I-26mA.given the mean life time of hole is 20uS at T-300K

8. Determine the diffusion capacitance due to holes in a Ge diode when forward bias current is I-26mA.given the mean life time of hole is 20uS at T-300K

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  1. Design a П-section or CLC filter for a full wave rectifier with the values of output dc voltage of 10 V and a load current of 150 mA and to have a ripple factor of 1 %.
8. Determine the diffusion capacitance due to holes in a Ge diode when forward bias current is I-26mA.given the mean life time of hole is 20uS at T-300K 9. Design a n-section or CLC filter for a full wave rectifier with the values of output dc voltage of 10 V and a load current of 150 mA and to have a ripple factor of 1 %. 10. A silicon PN diode has reverse saturation current of 20 µA at temperature 20°C. Calculate its reverse saturation current at 60°C. AwM
Transcribed Image Text:8. Determine the diffusion capacitance due to holes in a Ge diode when forward bias current is I-26mA.given the mean life time of hole is 20uS at T-300K 9. Design a n-section or CLC filter for a full wave rectifier with the values of output dc voltage of 10 V and a load current of 150 mA and to have a ripple factor of 1 %. 10. A silicon PN diode has reverse saturation current of 20 µA at temperature 20°C. Calculate its reverse saturation current at 60°C. AwM
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