12. A semiconductor has E = 1.5 eV, m, * = 10m *, n = 10 cm³, at T = 300K. h g a. Determine the position of the intrinsic Fermi level with respect to the center of the bandgap. b. Impurity atoms are added to lower the Fermi level by 0.45 eV below the bandgap. Are acceptor or donor atoms added? What is the concentration of the added impurity atoms?

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12. A semiconductor has E = 1.5 eV, m, * = 10m*, n = 10³ cm³, at T = 300K.
g
h
e
a. Determine the position of the intrinsic Fermi level with respect to the
center of the bandgap.
b. Impurity atoms are added to lower the Fermi level by 0.45 eV below the
bandgap. Are acceptor or donor atoms added? What is the concentration of
the added impurity atoms?
Transcribed Image Text:12. A semiconductor has E = 1.5 eV, m, * = 10m*, n = 10³ cm³, at T = 300K. g h e a. Determine the position of the intrinsic Fermi level with respect to the center of the bandgap. b. Impurity atoms are added to lower the Fermi level by 0.45 eV below the bandgap. Are acceptor or donor atoms added? What is the concentration of the added impurity atoms?
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