5. A silicon sample is doped by arsenic donors of concentration 1.0 × 1023 m The sample is maintained at room temperature. a) Calculate the intrinsic electron concentration, and show that it is negligible compared to the electron concentration supplied by the donors. b) Assuming that all the impurities are ionized, determine the position of the Fermi level. c) Describe the effect on the Fermi level if acceptors are introduced in the above sample at a concentration of 6.0 x 1021 m-3,
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- 3 The Fermi-Dirac distribution provides the fraction of electrons that can be found for a given electron energy and temperature of the material. Silicon is a widely use semiconductor for computer processors and GPUs, with a band gap of 1.11 eV at room temperature (293 K). a) What is the Fermi energy of Silicon at room temperature? b) Calculate the electron concentration (total number of electrons) at 0.6 eV above the fermi level (in the conduction band) of one mol of silicon (each silicon atom contributes 4 electrons).4Q1/Determine the temperature at which there is a 2 percent that an energy state 0.3 eV below the Fermi level is empty? Q2/ Determine the temperature at which there is a 3 percent that an energy state 0.3 eV below the Fermi level is empty?
- A silicon diode is operated in an environment whose temperature is ten times its ambient temperature. Its forward breakover voltage will a. not change at all b. be slightly greater than 0.7 V c. be less than 0.7 V d. be greater by ten times2. For a silicon one sided abrupt p/n junction has NA = 1x10¹⁹ cm³ and NB =No=3x10¹5 cm³. Critical field at breakdown is 3 x 105 V/cm. Maximum depletion width (Wm) is defined as the depletion width at avalanche breakdown. Ignore Vbi. (a) Calculate avalanche breakdown voltage and Wm. (b) Calculate the breakdown voltage called punch through voltage if device width (W) is reduced to 3.3 μm. (c) Find the stored minority carriers per unit area in the neutral n-region for a forward bias of 0.5V. Diffusion length of holes is 1 μm.5. A transistor is biased with feedback resistor Rg of 100k2. If Vcc= 25V, Rc= 1k2 and B= 200. Find the values of zero signal Ic and Vce ? 6. Find the Q-point values in the circuit. Also find the minimum power rating of the transistor -12 V 33 k2 1.8 k2 B= 50 5.6 k2 560 2
- Explain the band structure of an electrical conductor (metal), a semiconductor, and an insulator at 0K by showing the valence and conduction bands and fermi energy levels. Explain how the electrical conduction takes place in these three types of materials. Give an example for each type of material3) For a Ge (not Si) p-n junction with Na = 1016cm-3 and Na = 1017cm-3, the peak electric field in the junction at breakdown is 2 × 105 V/cm. a) Determine the depletion zone width for this peak electric field. b) Calculate the reverse bias breakdown voltage of the diode. Hint: the built-in potential is needed to obtain an accurate result. c) What can be done to which doping level to approximately double the breakdown voltage? Explain.1. Draw the typical energy band diagram of a metal and provide brief explanation for it. (Hint: Your should include the "Vacuum Level", the "Fermi Level" and the "Work Function" in your answer.) 2. What is the main difference between an "Insulator" and a "Semiconductor" from the energy band diagram point of view?
- 2. A silicon p-n step junction diode is doped with No = 10¹6 cm-³ and No = 4 x 1018 cm-³ on the n side and p side, respectively. Calculate the build-in potential, space charge width, and maximum field at zero bias at room temperature.11. The charge carriers con centration in pure silicon is 4.5 x 1016 m-3 at 300°K. Where the Fermi level would be if the silicon doped by 1 x 1021 donor atoms? Find the location of Fermi level at 200°K and 900°K. Use Eg(Si) = 1.1 eV.Phosphorous was added to high purity silicon to produce a 10 ? charge carrier concentration at room temperature. Calculate the conductivity of this material at room temperature, assuming that the mobility of electrons and hollows is the same as for intrinsic material. ?e =0.14 y ?h=0.048 ?-3/V s. ? = 2240(Ω − ?)-1