5. A silicon sample is doped by arsenic donors of concentration 1.0 × 1023 m The sample is maintained at room temperature. a) Calculate the intrinsic electron concentration, and show that it is negligible compared to the electron concentration supplied by the donors. b) Assuming that all the impurities are ionized, determine the position of the Fermi level. c) Describe the effect on the Fermi level if acceptors are introduced in the above sample at a concentration of 6.0 x 1021 m-3,
5. A silicon sample is doped by arsenic donors of concentration 1.0 × 1023 m The sample is maintained at room temperature. a) Calculate the intrinsic electron concentration, and show that it is negligible compared to the electron concentration supplied by the donors. b) Assuming that all the impurities are ionized, determine the position of the Fermi level. c) Describe the effect on the Fermi level if acceptors are introduced in the above sample at a concentration of 6.0 x 1021 m-3,
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Transcribed Image Text:5. A silicon sample is doped by arsenic donors of concentration 1.0 × 1023 m-3.
The sample is maintained at room temperature.
a) Calculate the intrinsic electron concentration, and show that it is negligible
compared to the electron concentration supplied by the donors.
b) Assuming that all the impurities are ionized, determine the position of the
Fermi level.
c) Describe the effect on the Fermi level if acceptors are introduced in the above
sample at a concentration of 6.0 × 10²1 -3
m
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