1. Si is doped with certain number of n-type of impurity atoms. The energy gap, Eg, of Si is 1.2eV. The Fermi energy shifts by 0.26eV towards the conduction band. The value of n; at 300K is 1.5 x 1010 cm-3 and k = 1.38 x 10-23 J/K. Find out (i) the electron concentration in Si at 300K, (ii) the free electron concentration, and (iii) the impurity dopant concentration. (leV = 1.60 x 10-1ºJ)
1. Si is doped with certain number of n-type of impurity atoms. The energy gap, Eg, of Si is 1.2eV. The Fermi energy shifts by 0.26eV towards the conduction band. The value of n; at 300K is 1.5 x 1010 cm-3 and k = 1.38 x 10-23 J/K. Find out (i) the electron concentration in Si at 300K, (ii) the free electron concentration, and (iii) the impurity dopant concentration. (leV = 1.60 x 10-1ºJ)
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Transcribed Image Text:1. Si is doped with certain number of n-type of impurity atoms. The energy
gap, Eg, of Si is 1.2eV. The Fermi energy shifts by 0.26eV towards the
conduction band. The value of n; at 300K is 1.5 x 1010 cm-3 and k = 1.38
x 10-23 J/K. Find out (i) the electron concentration in Si at 300K, (ii) the
free electron concentration, and (iii) the impurity dopant concentration.
(leV = 1.60 x 10-19J)
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