Answered: 2. Consider a metal-semiconductor… | bartleby

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2. Consider a metal-semiconductor contact between tungsten (W)
and n-type silicon doped to No = 10¹6 cm3 at T = 300 K. The work
function of W is 4.6 eV and the electron affinity of silicon is 4.01 eV.
Determine
(a) the Schottky barrier height
(b) the built-in potential barrier
(c) the maximum electric field.

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