Q2: A metal-semiconductor junction is formed between a metal with a work functionof 4.3 eV and p-type silicon with an electron affinity of 4.0 eV. The acceptor dopingconcentration in the silicon is N=5 10¹ cm³. Assume T = 300 K. (a) Sketch the16athermal equilibrium energy-band diagram. (b) Determine the height of the Schottkybarrier. (c) Sketch the energy-band diagram with an applied reverse-biased voltage ofV = 3 V. (d) Sketch the energy-band diagram with an applied forward-bias voltage ofRV =0.25V.a

Given: Here, the given details are, A metal-semiconductor junction is formed between a metal with a…

Answered: -3 = Q2: A metal-semiconductor junction…

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