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Q28. The band gap of an intrinsic semiconductor is E, =0.72 eV and m =6m. At 300 K, the Fermi level with respect to the edge of the valence band (in eV ) is at (upto three decimal places) k = 1.38×10 JK

Q28. The band gap of an intrinsic semiconductor is E, =0.72 eV and m =6m. At 300 K, the Fermi level with respect to the edge of the valence band (in eV ) is at (upto three decimal places) k = 1.38×10 JK

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Q28. The band gap of an intrinsic semiconductor is E = 0.72 eV and m =6m. At 300 K, the Fermi level with respect to the edge of the valence band (in eV ) is at _(upto three decimal places) k, = 1.38 ×10 JK
Transcribed Image Text:Q28. The band gap of an intrinsic semiconductor is E = 0.72 eV and m =6m. At 300 K, the Fermi level with respect to the edge of the valence band (in eV ) is at _(upto three decimal places) k, = 1.38 ×10 JK
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