1. Calculate the thermal equilibrium electron and hole concentration in silicon at T = 300 K for the case when the Fermi energy level is 0.31 eV below the conduction band energy. Eg=1.12eV2. Locate the Fermi energy level of GaAs with n = 3.1 x 1018 cm-3 at T = 400K and compare it when T = 500K. Below is the table of effective density of states for Si, GaAs and Ge at room temp.N₁ (cm ³)N₂. (cm ³)1.04 × 10¹⁹7.0 × 10¹86.0 × 10¹8SiliconGallium arsenideGermanium2.8 × 10¹94.7 x 10¹71.04 × 10¹⁹3. Repeat problem number 2 but, this time the majority carrier of GaAs is hole with p = 3.1 x 1018 cm-34. If the material in problem number 3 is replaced with Ge what happens to the location of the Fermi energy level? Does it move closer to the conduction band or farther from the conduction band?What could be the manifestation of this movement?

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1. Calculate the thermal equilibrium electron and hole concentration in silicon at T = 300 K for the case when the Fermi energy level is 0.31 eV below the conduction band energy. Eg=1.12eV 2. Locate the Fermi energy level of GaAs with n=3.1 x 1018 cm-3 at T = 400K and compare it when T = 500K. Below is the table of effective density of states for Si, GaAs and Ge at room temp. N₁ (cm ³) N. (cm-³) 2.8 x 1019. 4.7 x 10¹7 1.04 × 10¹⁹ Silicon Gallium arsenide Germanium 1.04 × 10¹9 7.0 × 10¹8 6.0 × 1018 3. Repeat problem number 2 but, this time the majority carrier of GaAs is hole with p = 3.1 x 1018 cm-3 4. If the material in problem number 3 is replaced with Ge what happens to the location of the Fermi energy level? Does it move closer to the conduction band or farther from the conduction band? What could be the manifestation of this movement?

1. Calculate the thermal equilibrium electron and hole concentration in silicon at T = 300 K for the case when the Fermi energy level is 0.31 eV below the conduction band energy. Eg=1.12eV 2. Locate the Fermi energy level of GaAs with n=3.1 x 1018 cm-3 at T = 400K and compare it when T = 500K. Below is the table of effective density of states for Si, GaAs and Ge at room temp. N₁ (cm ³) N. (cm-³) 2.8 x 1019. 4.7 x 10¹7 1.04 × 10¹⁹ Silicon Gallium arsenide Germanium 1.04 × 10¹9 7.0 × 10¹8 6.0 × 1018 3. Repeat problem number 2 but, this time the majority carrier of GaAs is hole with p = 3.1 x 1018 cm-3 4. If the material in problem number 3 is replaced with Ge what happens to the location of the Fermi energy level? Does it move closer to the conduction band or farther from the conduction band? What could be the manifestation of this movement?