The charge carriers con centration in pure silicon is 4.5 x 1016 m-3 at 300°K. Where the Fermi level would be if the silicon doped by 1 x 1021 donor atoms? Find the location of Fermi level at 200°K and 900°K. Use E,(Si) = 1.1 eV.
The charge carriers con centration in pure silicon is 4.5 x 1016 m-3 at 300°K. Where the Fermi level would be if the silicon doped by 1 x 1021 donor atoms? Find the location of Fermi level at 200°K and 900°K. Use E,(Si) = 1.1 eV.
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Transcribed Image Text:11. The charge carriers con centration in pure silicon is 4.5 x 1016 m-3 at 300°K. Where the
Fermi level would be if the silicon doped by 1 x 1021 donor atoms? Find the location of
Fermi level at 200°K and 900°K. Use Eg(Si) = 1.1 eV.
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