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Consider silicon at T-300 k. A Hall Effect device is fabricated with the following parameters: Geometry (d-0.005 cm, w 0.05 cm and L.-0.5 cm); I, 5 mA, V, 6.25 V, and B-5x102 Tesla, VH-6.5 mV, then the electron carrier mobility (m³/V.Sec) is..... *******

Consider silicon at T-300 k. A Hall Effect device is fabricated with the following parameters: Geometry (d-0.005 cm, w 0.05 cm and L.-0.5 cm); I, 5 mA, V, 6.25 V, and B-5x102 Tesla, VH-6.5 mV, then the electron carrier mobility (m³/V.Sec) is..... *******

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Consider silicon at T-300 k. A Hall Effect device is fabricated with the following parameters: Geometry (d=0.005 cm. w-0.05 cm and L-0.5 cm); I, -5 mA. V-6.25 V, and B-5x10-² Tesla, VH-6.5 mV, then the electron carrier mobility (m²/V.Sec) is...
Transcribed Image Text:Consider silicon at T-300 k. A Hall Effect device is fabricated with the following parameters: Geometry (d=0.005 cm. w-0.05 cm and L-0.5 cm); I, -5 mA. V-6.25 V, and B-5x10-² Tesla, VH-6.5 mV, then the electron carrier mobility (m²/V.Sec) is...
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