Consider a silicon pn junction at T = 300K. Assume the doping concentration in the n region is1020cm-3 and the doping concentration in the p region is 1019cm-3, and assume that a forward biasof 0.30 V is applied to the pn junction. Note/ n; = 1.5 x 1010 cm-3Calculate the minority carrier concentration at the edge of the space charge regions.

GivenT=300 KDoping concentration in n region ,Nn=1020 cm-3Doping concentration in p region ,Np=1019…

Consider a silicon pn junction at T 300 K. Assume the doping concentration in the n region is 1020 cm-3 and the doping concentration in the p region is 101°cm-3, and assume that a forward bias of 0.30 V is applied to the pn junction. Note/ n; = 1.5 x 1010 ст cm-3 Calculate the minority carrier concentration at the edge of the space charge regions.

Consider a silicon pn junction at T 300 K. Assume the doping concentration in the n region is 1020 cm-3 and the doping concentration in the p region is 101°cm-3, and assume that a forward bias of 0.30 V is applied to the pn junction. Note/ n; = 1.5 x 1010 ст cm-3 Calculate the minority carrier concentration at the edge of the space charge regions.

College Physics

11th Edition

ISBN:9781305952300

Author:Raymond A. Serway, Chris Vuille

Publisher:Raymond A. Serway, Chris Vuille

Chapter1: Units, Trigonometry. And Vectors

Section: Chapter Questions

Problem 1CQ: Estimate the order of magnitude of the length, in meters, of each of the following; (a) a mouse, (b)...

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ASAP
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