B/ A new semiconductor material is to be n-type and doped with 6x10¹ cm³ donor atoms. Assume complete ionization and assume N,= 0. The effective density of states functions are N, -1.&r 10 cm and N, 1.2x10" cm³ at 7-300 K. A special semiconductor device fabricated with this material requires that the electron concentration be no greater than 6.08x10¹ cm³ at 7= 400 K. What is the minimum band gap energy required in this new material?
B/ A new semiconductor material is to be n-type and doped with 6x10¹ cm³ donor atoms. Assume complete ionization and assume N,= 0. The effective density of states functions are N, -1.&r 10 cm and N, 1.2x10" cm³ at 7-300 K. A special semiconductor device fabricated with this material requires that the electron concentration be no greater than 6.08x10¹ cm³ at 7= 400 K. What is the minimum band gap energy required in this new material?
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Transcribed Image Text:B/ A new semiconductor material is to be n-type and doped with 6x10¹ cm³ donor atoms. Assume
complete ionization and assume N,= 0. The effective density of states functions are N, =1.&r 10¹ cm
and N,= 1.2x10 cm³ at 7-300 K. A special semiconductor device fabricated with this material
requires that the electron concentration be no greater than 6.08x10¹ cm³ at 7= 400 K. What is the
minimum band gap energy required in this new material?
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