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Consider a silicon pn junction at T = 300 K with an acceptor doping concentration (1 x 1018 cm-3) and a donor doping concentration (1 × 1015cm-3. Assume that the intrinsic concentration is (1.5 x 1010 cm-3), the built-in potential barrier in the junction is. ст Note: Boltzmann Constant is 8.62 x 10° eV/K e = 1.6 × 10-19C

Consider a silicon pn junction at T = 300 K with an acceptor doping concentration (1 x 1018 cm-3) and a donor doping concentration (1 × 1015cm-3. Assume that the intrinsic concentration is (1.5 x 1010 cm-3), the built-in potential barrier in the junction is. ст Note: Boltzmann Constant is 8.62 x 10° eV/K e = 1.6 × 10-19C

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Consider a silicon pn junction at T= 300 K with an acceptor doping concentration (1 x 1018 cm-3) and a donor doping concentration (1 × 1015 cm-3. Assume that the intrinsic concentration is (1.5 x 1010 cm-3), the built-in potential barrier in the junction is.. Note: Boltzmann Constant is 8.62 x 10 cV/K e = 1.6 x 10-19C
Transcribed Image Text:Consider a silicon pn junction at T= 300 K with an acceptor doping concentration (1 x 1018 cm-3) and a donor doping concentration (1 × 1015 cm-3. Assume that the intrinsic concentration is (1.5 x 1010 cm-3), the built-in potential barrier in the junction is.. Note: Boltzmann Constant is 8.62 x 10 cV/K e = 1.6 x 10-19C
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