strips ne has (40 um) thick, and (6 mm) long. One strip is of int ermanium and has (0.5 mm) wide. Determine the width of other s made of Ge., doped with (102) donor atom/cm',at the we emperature. The intrinsic carrier density of Ge, is (2.5 x10"m ne electron and hole mobilities are (0.4 m2/V.Sec. , and 0.2 m²/V
strips ne has (40 um) thick, and (6 mm) long. One strip is of int ermanium and has (0.5 mm) wide. Determine the width of other s made of Ge., doped with (102) donor atom/cm',at the we emperature. The intrinsic carrier density of Ge, is (2.5 x10"m ne electron and hole mobilities are (0.4 m2/V.Sec. , and 0.2 m²/V
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Transcribed Image Text:Q/ A (10 KQ) resistor is made of two strips connected in parallel, each
one has (40 um) thick, and (6 mm) long. One strip is of intrinsic
germanium and has (0.5 mm) wide. Determine the width of other strip if
it made of Ge., doped with (10²) donor atom/cm',at the working
temperature. The intrinsic carrier density of Ge, is (2.5 x10"m), and
the electron and hole mobilities are (0.4 m?/V.Sec. , and 0.2 m/V.Sec.)
respectively.
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