For a metal of 4.3 eV work function irradiated with photons of 0.17 pm of the liberated photo-electrons wavelength, The De Broglie wavelength will be: 0.1070 nm 0.6419 nm O 0.7093 nm O6.740 nm 0 55.82 nm

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For a metal of 4.3 ev work function irradiated with photons of 0.17 pm
of the liberated photo-electrons
wavelength, The De Broglie wavelength
vill be
0.1070 nm
O 0.6419 nm
0.7093 nm
6.740 nm
55.82 nm
Transcribed Image Text:For a metal of 4.3 ev work function irradiated with photons of 0.17 pm of the liberated photo-electrons wavelength, The De Broglie wavelength vill be 0.1070 nm O 0.6419 nm 0.7093 nm 6.740 nm 55.82 nm
: Si, Ge, GaAs Parameters and Universal Constants
UNIVERSAL CONSTANTS
Properties
SEMICONDUCTOR
6.63 x 10-34 Js
Si
Ge
-31
9.11 x 10
Kg
mo
E, (eV)
ni (cm-3)
Hn (cm2/V – s)
Hp (cm2/V – s)
Ne (cm-3)
No (cm 3)
1.1
0.67
1.42
3.14
1.5 x 1010
2.3 x 1013
1.8 x 106
1.602 x 10
19
C
1500
3900
8500
-12
8.85 x 10
F/m
Eo
450
1900
400
-34
1.05 x 10
J- s
2.78 x 1019 1.04 x 1019 4.45 x 1017
8.6 x 10-5 eV/K
26 mV (T = 300 K)
26 meV (T = 300 K)
3 x 108 m/s
K
9.84 x 1018
6 x 1018
7.72 x 1018
KT/q
m /m.
0.082
0.98
0.067
KT
m/m.
Er (F/m)
0.28
0.49
0.45
11.7
16
13.1
nair = 1
= 3.66
Some useful relations
E9ALGA1- As (x) = 1.424 + 1.247x
EgIn Ga1-As (T) = 0.36 + 1.064x
1 eV = 1.602 x 10-19 J
1 KG = 1 x 10-5 Wb/cm2
Transcribed Image Text:: Si, Ge, GaAs Parameters and Universal Constants UNIVERSAL CONSTANTS Properties SEMICONDUCTOR 6.63 x 10-34 Js Si Ge -31 9.11 x 10 Kg mo E, (eV) ni (cm-3) Hn (cm2/V – s) Hp (cm2/V – s) Ne (cm-3) No (cm 3) 1.1 0.67 1.42 3.14 1.5 x 1010 2.3 x 1013 1.8 x 106 1.602 x 10 19 C 1500 3900 8500 -12 8.85 x 10 F/m Eo 450 1900 400 -34 1.05 x 10 J- s 2.78 x 1019 1.04 x 1019 4.45 x 1017 8.6 x 10-5 eV/K 26 mV (T = 300 K) 26 meV (T = 300 K) 3 x 108 m/s K 9.84 x 1018 6 x 1018 7.72 x 1018 KT/q m /m. 0.082 0.98 0.067 KT m/m. Er (F/m) 0.28 0.49 0.45 11.7 16 13.1 nair = 1 = 3.66 Some useful relations E9ALGA1- As (x) = 1.424 + 1.247x EgIn Ga1-As (T) = 0.36 + 1.064x 1 eV = 1.602 x 10-19 J 1 KG = 1 x 10-5 Wb/cm2
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